Ngokuvamile, kunzima ukugwema ukwehluleka okuncane ekuthuthukisweni, ekukhiqizeni nasekusetshenzisweni kwamadivaysi e-semiconductor. Ngokuthuthuka okuqhubekayo kwezimfuneko zekhwalithi yomkhiqizo, ukuhlaziya ukwehluleka kuya ngokuya kubaluleke kakhulu. Ngokuhlaziya ama-chips athile ahlulekayo, Ingasiza abaklami besekethe bathole amaphutha edizayini yedivayisi, ukungafani kwamapharamitha wenqubo, idizayini engenangqondo yesekethe yendawo noma ukungasebenzisi kahle okubangelwa inkinga. Isidingo sokuhlaziywa kokwehluleka kwamadivayisi we-semiconductor sibonakala ikakhulukazi kulezi zici ezilandelayo:
(1) Ukuhlaziywa kokwehluleka kuyindlela edingekayo yokunquma indlela yokwehluleka kwe-chip yesisetshenziswa;
(2) Ukuhlaziywa kokwehluleka kunikeza isisekelo esidingekayo kanye nolwazi lokuxilongwa okuphumelelayo kwephutha;
(3) Ukuhlaziywa kokwehluleka kunikeza ulwazi lwempendulo oludingekayo ukuze onjiniyela abaklami baqhubeke bethuthukisa noma balungise idizayini ye-chip futhi bayenze ibe nengqondo ngokwengeziwe ngokuvumelana nencazelo yedizayini;
(4) Ukuhlaziywa kokwehluleka kunganikeza isengezo esidingekayo sokuhlolwa kokukhiqiza futhi kunikeze isisekelo solwazi oludingekayo ukuze kuthuthukiswe inqubo yokuhlola yokuqinisekisa.
Ukuze kuhlaziywe ukwehluleka kwama-semiconductor diode, ama-audions noma ama-circuits ahlanganisiwe, imingcele kagesi kufanele ihlolwe kuqala, futhi ngemva kokuhlolwa kokubukeka ngaphansi kwe-optical microscope, ukupakishwa kufanele kukhishwe. Nakuba kugcinwa ubuqotho bomsebenzi we-chip, ukuhola kwangaphakathi nangaphandle, amaphuzu okubopha kanye nobuso be-chip kufanele kugcinwe ngangokunokwenzeka, ukuze kulungiselelwe isinyathelo esilandelayo sokuhlaziya.
Kusetshenziswa ukuskena i-electron microscopy kanye ne-energy spectrum ukwenza lokhu kuhlaziya: okuhlanganisa ukubhekwa kwe-microscopic morphology, ukusesha kwephoyinti lokuhluleka, ukubhekwa kwendawo enesici nendawo, ukulinganisa okunembile kosayizi wejiyomethri we-microscopic wedivayisi kanye nokusatshalaliswa okungenzeka kwendawo embi kanye nokwahlulela okunengqondo kwesango ledijithali. isifunda (ngendlela yesithombe sokungafani kwe-voltage); Sebenzisa i-spectrometer yamandla noma i-spectrometer ukwenza lokhu kuhlaziya kunokulandelayo: ukuhlaziya ukwakheka kwento encane, ukwakheka kwempahla noma ukuhlaziya ukungcola.
01. Ukonakala kwendawo kanye nokushiswa kwamadivaysi e-semiconductor
Ukonakala kwendawo kanye nokushiswa kwamadivayisi esemiconductor kokubili izindlela zokuhluleka ezivamile, njengoba kuboniswe kuMfanekiso 1, okuyisici songqimba oluhlanziwe lwesekethe ehlanganisiwe.
Umfanekiso wesi-2 ubonisa iphutha elingaphezulu lesendlalelo se-metalized sesekethe ehlanganisiwe.
Umfanekiso wesi-3 ubonisa isiteshi sokuhlukanisa phakathi kwemichilo emibili yensimbi yesekethe ehlanganisiwe.
Umfanekiso 4 ubonisa ukugoqeka komugqa wensimbi kanye nokuwohloka kwe-skew ebhulohweni lomoya kudivayisi ye-microwave.
Umfanekiso 5 ubonisa ukushiswa kwegridi yeshubhu le-microwave.
Umfanekiso wesi-6 ubonisa umonakalo owenziwe ocingweni lukagesi oluhlanganisiwe lwensimbi.
Umfanekiso 7 ubonisa ukuvulwa kwe-chip ye-mesa diode kanye nenkinga.
Umfanekiso wesi-8 ubonisa ukuwohloka kwe-diode evikelayo ekufakweni kwesifunda esihlanganisiwe.
Umfanekiso we-9 ubonisa ukuthi indawo engaphezulu ye-chip yesifunda ehlanganisiwe yonakaliswa umthelela wemishini.
Umfanekiso we-10 ubonisa ukushiswa okuncane kwe-chip yesekethe ehlanganisiwe.
Umfanekiso we-11 ubonisa i-chip ye-diode yaphulwa futhi yashiswa kakhulu, futhi izindawo zokuphuka zaphenduka isimo sokuncibilika.
Umfanekiso we-12 ubonisa i-gallium nitride microwave power tube chip eshisiwe, futhi indawo eshile ibonisa isimo esincibilikisiwe sokufafaza.
02. Ukuwohloka kwe-electrostatic
Amadivaysi e-semiconductor kusukela ekukhiqizeni, ukupakisha, ezokuthutha kuze kube sebhodini lesifunda ukuze afakwe, ama-welding, ukuhlanganiswa komshini nezinye izinqubo angaphansi kosongo lukagesi ongaguquki. Kule nqubo, ezokuthutha ziyalimala ngenxa yokuhamba njalo kanye nokuchayeka kalula kugesi ongashintshi okhiqizwa izwe langaphandle. Ngakho-ke, ukunakwa okukhethekile kufanele kukhokhwe ekuvikelweni kwe-electrostatic ngesikhathi sokudlulisela nokuthutha ukuze kuncishiswe ukulahlekelwa.
Kumadivayisi we-semiconductor ane-unipolar MOS tube kanye nesekethe ehlanganisiwe ye-MOS izwela ikakhulukazi kugesi omile, ikakhulukazi ishubhu le-MOS, ngenxa yokuthi ukumelana kwawo kokufaka kuphezulu kakhulu, futhi amandla e-electrode-source capacitance mancane kakhulu, ngakho-ke kulula kakhulu kuthintwa inkambu yangaphandle ye-electromagnetic noma induction kanye nokushajwa kwe-electrostatic, futhi ngenxa yesizukulwane se-electrostatic, kunzima ukukhipha ukushaja ngesikhathi, Ngakho-ke, kulula ukubangela ukunqwabelana kukagesi omile ekuwohlokeni khona manjalo kwedivayisi. Uhlobo lokuqhekeka kwe-electrostatic ngokuyinhloko ukuwohloka okuhlakaniphile kukagesi, okungukuthi, ungqimba oluncane lwe-oxide lwegridi luphukile, kwakheka imbobo yokukhonkotha, efinyeza igebe phakathi kwegridi nomthombo noma phakathi kwegridi nomsele.
Futhi uma kuqhathaniswa nekhono elihlanganisiwe le-MOS tube MOS isekethe yokuqhekeka kwe-antistatic lingcono kancane, ngoba indawo yokufaka yesekethe ehlanganisiwe ye-MOS ifakwe i-diode evikelayo. Uma sekunogesi omkhulu we-electrostatic noma amandla kagesi okwandayo kuma-diode amaningi avikelayo angashintshelwa phansi, kodwa uma i-voltage iphezulu kakhulu noma i-amplification yamanje inkulu kakhulu, ngezinye izikhathi ama-diode avikelayo azokwazi ukushintshwa ngokwawo, njengoba kuboniswe Emfanekisweni. 8.
Izithombe ezimbalwa eziboniswe kumfanekiso13 ziyisimo sendawo sokuhlukaniswa kwe-electrostatic sesekethe ehlanganisiwe ye-MOS. Indawo ephukile incane futhi ijulile, iveza isimo sokuncibilika sokufafaza.
Umfanekiso 14 ubonisa ukubonakala kokuhlukana kwe-electrostatic kwekhanda kazibuthe le-hard disk yekhompyutha.
Isikhathi sokuthumela: Jul-08-2023
